BU508DF, BU-508DF, BU 508DF Philips High-Speed Switching NPN Power Transistor SOT199 (TO-3FP)
BU508DF Type Designator: BU508DF Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 34 W Maximum Collector; Base Voltage |Vcb|: 1500 V Maximum Collector; Emitter Voltage |Vce|: 700 V Maximum Collector Current |Ic max|: 8 A Max; Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 7 MHz Collector Capacitance (Cc): 125 pF Forward Current Transfer Ratio (hFE), MIN: 10 Noise Figure, dB:; Package: ISOTOP3;